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SiC Wafer
SiC Wafer for MOSFETs, Schottky Diodes, & Photodiodes SiC Wafer for MOSFETs, Schottky Diodes, & Photodiodes

SiC Wafer for MOSFETs, Schottky Diodes, & Photodiodes

Silicon carbide wafer, a new-gen semiconductor material, is used to manufacture MOSFETs, Schottky diodes, photodiodes, & other electronic devices.
  • item no. :

    CS-SIC-JP001N
  • Material : SiC

  • description

Properties of SiC Silicon Carbide Wafer


  • Low Energy Loss: Our silicon carbide-based electronic components boast significantly lower switching and on-off losses compared to conventional IGBT modules. As switching frequency increases, the difference in loss becomes even more pronounced.
  • Compact Design: Silicon carbide electronic components are smaller than their silicon-based counterparts of the same specification, offering less energy loss and higher current density.
  • High-Frequency Switching: Silicon carbide material boasts an electronic saturation drift rate twice that of silicon, enhancing component operating frequency.
  • High Temperature Resistance & Excellent Heat Dissipation: With a band gap width and thermal conductivity about three times that of silicon, silicon carbide can withstand higher temperatures and release generated heat more easily.




Applications of SiC Silicon Carbide Wafer


  • High-Power Devices (Conductive Type): Ideal for producing high-power devices like power modules and drive modules due to high thermal conductivity, high breakdown electric field strength, and low energy loss.
  • RF Electronic Devices (Semi-Insulating Type): Meets the demands of high-frequency operation, suitable for RF power amplifiers, microwave devices, and high-frequency switches.
  • Photoelectronic Devices (Semi-Insulating Type): With a wide energy gap and high thermal stability, perfect for photodiodes, solar cells, and laser diodes.
  • Temperature Sensor (Conductive Type): Features high thermal conductivity and stability, making it ideal for producing wide working range and high-precision temperature sensors.





Size Chart of SiC Silicon Carbide Wafer

Please provide drawing and parameter requirements for customization.


Silicon Carbide Wafer Conductive
Item NO. Diameter
(inch)
Thickness
(mm)
CS-SIC-JP001N 2 0.35
CS-SIC-JP002N 3 0.35
CS-SIC-JP003N 4 0.35
CS-SIC-JP004N 6 0.35
CS-SIC-JP005N 2 0.5
CS-SIC-JP006N 3 0.5
CS-SIC-JP007N 4 0.5
CS-SIC-JP008N 6 0.5


SiC Substrate Round
Item NO. Diameter
(inch)
Thickness
(mm)
CS-SIC-CD101 2 2
CS-SIC-CD102 3 3
CS-SIC-CD103 4 4
CS-SIC-CD104 6 2
CS-SIC-CD105 8 3

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